亚洲一区二区三区在线-欧美一二区-欧美亚洲一区-欧美激情一区

CGHV40180F大功率氮化鎵功放200W

最重要因素

功率：180-250W峰值

幀率條件：DC-2.0GHz增益控制： 24dB上班工作頻率： 50V二極管封裝：Pill丸式、蝶閥法蘭

優惠訂貨周期：2-3周

車輛淘寶手機端講解

必選芯片封裝方法：CGHV40180P CGHV40180F

Product SKU	Recommended For New Design?	Technology	Frequency Min	Frequency Max	Peak Output Power	Gain	Efficiency	Operating Voltage	Form	Package Type
CGHV40180P	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Pill
CGHV40180F-AMP3	Yes	GaN on SiC	0.96 GHz	1.25 GHz	200 W	24 dB	70%	28 V / 50 V	Evaluation Board	Flange
CGHV40180F	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Flange